Improving the Optical and Electrical Characteristics of Layered Semiconductors Doped with Transition Metals

Abstract

This research explores the improvement of optical and electrical characteristics in layered semiconductors doped with transition metals, focusing on how doping alters their performance. Transition metal doping results in significant enhancements in band gap tuning, luminescence, conductivity, and charge carrier concentration, which are vital for optoelectronics and renewable energy applications. The study examines hole transport in MEH-PPV and P3HT diodes across different diode setups, showing the considerable influence of non-zero Schottky barriers. J-V characteristics, measured at varying temperatures and thicknesses, were compared with theoretical models, supporting both conventional and modified approaches. These results emphasize the potential of transition metal-doped semiconductors for cutting-edge technological applications, highlighting the need to optimize both optical and electrical properties to meet the growing demands of modern technology.